H - Electricity – 01 – L
Patent
H - Electricity
01
L
345/17, 345/23,
H01L 31/028 (2006.01) H01L 31/036 (2006.01) H01L 31/04 (2006.01) H01L 31/072 (2006.01) H01L 31/18 (2006.01) H01L 33/00 (2006.01)
Patent
CA 2021020
ABSTRACT The invention provides a method of producing a semiconductor diode, which can be a light emitting diode or a photovoltaic cell. A p-type diamond substrate which can be a crystal or a crystalline or polycrystalline film is implanted with ions, preferably at a low temperature, to create a vacancy and interstitial-rich implanted region. The implanted region defines a p-d junction with the substrate. Respective electrical contacts are applied to the implanted region and to the substrate. LED's produced by the method emit blue light, which is useful in telecommunications systems. Photovoltaic cells with a diameter of 50 to 75 mm can also be created.
de Beers Industrial Diamond Division (proprietary)
Gowling Lafleur Henderson Llp
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