B - Operations – Transporting – 32 – B
Patent
B - Operations, Transporting
32
B
B32B 9/00 (2006.01) C23C 16/26 (2006.01) D01F 9/12 (2006.01)
Patent
CA 2548782
The present invention provides films and substrates coated with films that comprise a nano-crystalline diamond matrix that is substantially free of graphite inclusions. The present invention also provides a method of chemical vapor deposition to prepare the films. The method of chemical vapor deposition operates at a DC bias voltage that substantially precludes the formation of a plasma ion capable of causing a region of a nano-crystalline diamond matrix within a forming film to allotrope when the plasma ion collides with the film.
L'invention concerne des films et des substrats revêtus de films qui comprennent une matrice de diamant nanocristallin sensiblement exempte d'inclusions de graphite. L'invention concerne également un procédé de dépôt chimique en phase vapeur permettant de préparer les films. Ce procédé de dépôt chimique en phase vapeur fonctionne à une tension de polarisation en courant continu qui empêche sensiblement la formation d'un ion plasma capable de produire une forme allotrope d'une région d'une matrice de diamant nanocristallin dans un film de formation lorsque l'ion plasma entre en collision avec le film.
Gowling Lafleur Henderson Llp
Nanotech Llc
LandOfFree
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