Diamond laser crystal and method of manufacturing the same

Details Diamond laser crystal and method of manufacturing the same Diamond laser crystal and method of manufacturing the same

C - Chemistry, Metallurgy

30

B

148/3.6, 204/91.

C30B 29/04 (2006.01) B01J 3/06 (2006.01) C30B 33/00 (2006.01) H01S 3/16 (2006.01)

Patent

CA 1321530

ABSTRACT OF THE DISCLOSURE Disclosed herein is a method of manufacturing a diamond laser crystal having excellent laser efficiency. First, a synthetic type Ib diamond containing at least 60 volume percent of a (111) plane growth sector (43) is prepared. This synthetic diamond is thermally treated under high temperature/high pressure, so that type Ib nitrogen contained in the synthetic diamond is converted to type IaA nitrogen. Thereafter an electron beam is applied to the synthetic diamond in order to generate vacancies in the synthetic diamond. Finally, annealing is performed on the synthetic diamond to form H3 centers by coupling type IaA nitrogen contained in the synthetic diamond with the vacancies. According to this method, the H3 centers can be formed in the synthetic type Ib diamond in high concentration, while formation of NV centers which become an obstacle to laser action can be suppressed.

602061

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