C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
204/96.14
C23C 14/06 (2006.01) C23C 14/00 (2006.01)
Patent
CA 1235087
Abstract The present invention relates to a diamond-like thin film and a method of making the diamond-like thin film comprises causing sputtering by applying an electric power under a limited hydrogen pressure within a sputtering apparatus having a graphite target and forming on a substrate the diamond-like thin film composed an accumulation of particles of several nm to several 100nm and having its surface enclosed with alkyl radicals whose carbon number is 3 or less and its interior provided with a diamond structure of a four coordinated carbon arrangement.
468432
Hiraki Akio
Miyasato Tatsuro
Kabushiki Kaisha Meidensha
Macrae & Co.
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