Dielectric composition for thin-film transistors

Details Dielectric composition for thin-film transistors Dielectric composition for thin-film transistors

C - Chemistry, Metallurgy

08

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C08L 83/04 (2006.01) C08J 3/28 (2006.01) C08K 5/00 (2006.01) C08L 25/18 (2006.01) H01B 3/00 (2006.01) H01L 21/02 (2006.01) H01L 21/336 (2006.01)

Patent

CA 2738099

An electronic device, such as a thin-film transistor, includes a substrate and a dielectric layer formed from a dielectric composition. The dielectric composition includes a dielectric material, a crosslinking agent, and an infrared absorbing agent. In particular embodiments, the dielectric material comprises a lower-k dielectric material and a higher-k dielectric polymer. When deposited, the lower-k dielectric material and the higher-k dielectric material form separate phases. The infrared absorbing agent allows the dielectric composition to attain a temperature that is significantly greater than the temperature attained by the substrate during curing. This difference in temperature allows the dielectric layer to be cured at relatively high temperatures and/or shorter time periods, permitting the selection of lower- cost substrate materials that would otherwise be deformed by the curing of the dielectric layer.

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