Dielectrically isolated high voltage semiconductor devices

Details Dielectrically isolated high voltage semiconductor devices Dielectrically isolated high voltage semiconductor devices

H - Electricity

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H01L 29/04 (2006.01) H01L 21/314 (2006.01) H01L 21/762 (2006.01) H01L 27/08 (2006.01) H01L 29/739 (2006.01) H01L 29/8605 (2006.01)

Patent

CA 1123526

BERTHOLD-2 18. DIELECTRICALLY ISOLATED HIGH VOLTAGE SEMICONDUCTOR DEVICES Abstract of the Disclosure A structure for achieving closely spaced high voltage devices in integrated circuits. The devices are formed in single crystalline tubs (11) in a polycrystalline substrate (10). In order to prevent the potential of the substrate from causing breakdown of the devices, there is included between the single crystalline tubs and the polycrystalline substrate a semi-insulating layer (13) which has trapping states capable of taking on charge from the single crystalline region. The shielding provided by the semi-insulating layer permits the surface regions of the device to be made closer to the polycrystalline substrate and the tubs to be made more shallow.

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