Dielectrically-isolated integrated circuit complementary...

Details Dielectrically-isolated integrated circuit complementary... Dielectrically-isolated integrated circuit complementary...

H - Electricity

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H01L 27/02 (2006.01) H01L 21/762 (2006.01) H01L 27/082 (2006.01)

Patent

CA 1126875

DIELECTRICALLY-ISOLATED INTEGRATED CIRCUIT COMPLEMENTARY TRANSISTORS FOR HIGH VOLTAGE USE Abstract Integrated circuit complementary transistors for high voltage switching applications are fabricated in separate dielectrically isolated pockets (12), (14) of high resistivity silicon, supported in a conductive medium (11) such as polycrystalline silicon, using surface adjacent conductivity type zones constituting emitter (19), (23), base (16), (20) and collector zones (17), (21). In one embodiment using high resistivity (75-300 ohm cm) silicon, referred to as ? material, for the material of the pocket, one transistor is a PN?P device, and the other is an NP?N. In the PN?P the reverse-biased-collector pn junction is the interface between the N base zone (16 and the ? portion (12) of the collector zone. In the NP?N transistor the base-collector junction is the interface between the lightly doped ? extension (14) of the base zone (20) and the N collector zone (21). A connection (32) is provided to the conductive substrate to enable application of a suitable potential thereto.

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