Dielectrically isolated semiconductive device

Details Dielectrically isolated semiconductive device Dielectrically isolated semiconductive device

H - Electricity

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H01L 21/223 (2006.01) H01L 21/308 (2006.01) H01L 21/32 (2006.01) H01L 21/762 (2006.01)

Patent

CA 1051123

ABSTRACT OF THE DISCLOSURE A matrix array of semiconductor diodes formed in an epitaxial layer of a semiconductor wafer and being dielectrically isolated from each other by two orthogonal sets of parallel insulating oxide regions, one set extending completely through the epitaxial layer and the other set extending only partially through the epitaxial layer. A preferred method of forming the matrix array is also disclosed.

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