Diethylberyllium dopant source for mocvd grown epitaxial...

Details Diethylberyllium dopant source for mocvd grown epitaxial... Diethylberyllium dopant source for mocvd grown epitaxial...

C - Chemistry, Metallurgy

30

B

117/85, 148/2.4

C30B 25/02 (2006.01) H01L 21/205 (2006.01) H01L 21/223 (2006.01) H01L 21/365 (2006.01) H01L 29/207 (2006.01)

Patent

CA 1221007

ABSTRACT A metal-organic transport compound that permits the growth of readily reproducible beryllium doped epitaxial layers is described. In a MOCVD reactor system, a process is performed involving the epitaxial deposition of a layer of a semiconductor material, including a given elemental species, onto a semiconductor substrate maintained within the MOCVD reactor chamber. The elemental species is obtained from the decomposition of a vapor-phase organo-metallic compound consisting essentially of diethylberyllium.

449726

Affiliated with

Also associated with

Rating

Diethylberyllium dopant source for mocvd grown epitaxial... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Diethylberyllium dopant source for mocvd grown epitaxial..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Diethylberyllium dopant source for mocvd grown epitaxial... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1197817