Differential stress reduction in thin films

C - Chemistry – Metallurgy – 30 – B

Patent

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Details

C30B 29/68 (2006.01) B81B 3/00 (2006.01) B81B 7/02 (2006.01) B81C 1/00 (2006.01) C23C 14/02 (2006.01) C23C 14/06 (2006.01) C30B 23/02 (2006.01) C30B 29/06 (2006.01) C30B 29/08 (2006.01) C30B 29/38 (2006.01) H01L 21/20 (2006.01)

Patent

CA 2467174

A crystalline thin film structure formed by the deposition of a predominant first crystalline material in two or more layers interleaved by layers of a second crystalline material having a lattice constant that differs from the lattice constant of the predominant first crystalline material in order to disrupt the growth of columnar crystals in the predominant first crystalline material in order to reduce the differential stress profile through the thickness of the film structure relative to the differential stress profile of a crystalline thin film structure formed solely from the predominant first crystalline material.

Structure sous forme de film mince cristallin formée par dépôt d'une première matière cristalline prédominante en deux couches ou plus dans lesquelles sont intercalées des couches d'une seconde matière cristalline ayant une constante de réseau qui diffère de la constante de réseau de la première matière cristalline prédominante afin d'interrompre la croissance de cristaux en colonnes dans la première matière cristalline prédominante, en vue de réduire le profil de contrainte différentielle à travers l'épaisseur de la structure sous forme de film par comparaison au profil de contrainte différentielle d'une structure sous forme de film mince cristallin constituée uniquement de la première matière cristalline prédominante.

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