H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/94
H01L 29/82 (2006.01) G01R 33/06 (2006.01) H01L 29/868 (2006.01)
Patent
CA 1153826
RA9-79-009 DIFFERENTIALLY MODULATED AVALANCHE AREA MAGNETICALLY SENSITIVE TRANSISTOR Abstract A new semiconductive device for sensing uniaxial magnetic fields is described. The sensor is essen- tially a dual collector lateral bipolar transisitor operated in the avalanche region. Each of the collec- tors exhibits two space charge resistance effects. One effect produces a negative resistance and the other produces a positive resistance. When the two space charge resistances are carefully balanced, a net zero collector resistance is achieved. A balanced condi- tion can be maintained for a broad range of collector currents. A vertical VI property is thereby achieved. It has been found that the positive space charge resis- tance characteristic is inversely proportional to the ionization area and that the negative component is pro- portional to the area in the avalanche zone at each collector. It has been found that a magnetic field can modulate the ionization areas at the collector junctions. The area modulated results in modulation of the positive and negative space charge resistances at each collector and a resultant shift in the avalanche voltage occurs for each collector. A differential out- put may be obtained since the modulation effect operates oppositely on each of the collector junction areas. This mechanism accounts for the linear and differential magnetoresistive behavior of the device.
373885
International Business Machines Corporation
Kerr Alexander
LandOfFree
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