Diffusion bonding of crystals

Details Diffusion bonding of crystals Diffusion bonding of crystals

H - Electricity

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H01L 21/18 (2006.01) B23K 1/19 (2006.01) B23K 1/20 (2006.01) B23K 20/22 (2006.01) B23K 31/02 (2006.01) B23K 35/00 (2006.01) H01L 41/047 (2006.01) G02F 1/11 (2006.01)

Patent

CA 1078532

DIFFUSION BONDING OF CRYSTALS ABSTRACT A method of bonding two crystals together is disclosed. A bond enhancing material such as chromium (Cr) is vapor deposited on one crystal, and on this is vapor deposited a noble metal such as gold (Au). On the other crystal a low melting point metal such as tin (Sn) or indium (In) is vapor deposited. In the case of In this can either be directly on the crystal or on a layer of bond enhancing material; in the case of Sn this must be on a bond enhancing material. On top of the low melting point metal a layer of the same noble metal is deposited to prevent oxidation thereof. The noble metal layers are brought into contact with each other in vacuum or inert atmosphere and pressure applied thereto at a temperature of 100°C to 150°C in the case of In and 100°C to 200°C in the case of Sn. The low melting point metal will diffuse into the noble metals and across the interface causing a bond to form by elimination of the boundary between the crystals.

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