Digital integrated circuit comprising complementary field...

H - Electricity – 03 – K

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328/186, 354/214

H03K 3/356 (2006.01)

Patent

CA 1221142

ABSTRACT "Digital integrated circuit comprising complementary field effect transistors." Digital integrated C-MOS circuit in which two cross- coupled P-MOS transistors are connected via two separation tran- sistors (N-MOS) to two complementary switching N-MOS transistor networks. The gate electrodes of the separation transistors are connected to a reference voltage source. The switching speed of the C-MOS circuit is increased in that a) the voltage sweep across the logic network is reduced; b) the P-MOS transistor, which is connected via a separation transistor to a junction of the logic network to be charged, is slightly conducting and so is "ready" to charge this junction, and c) the separation transistor forms between the fully conducting P-MOS transistor and the junction to be discharged of the second logic network a high impedance which prevents the (still conducting) P-MOS transistor from charging the junction.

470635

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