G - Physics – 02 – F
Patent
G - Physics
02
F
345/56, 328/114.
G02F 1/17 (2006.01)
Patent
CA 1037133
ABSTRACT OF THE DISCLOSURE An optical device for gating an incident light ray which utilizes the principle of absorption edge shift in a semiconductor due to an external electric field. The optical device comprises a semiconductor material and a source of bias potential applied thereacross. In a pre- ferred embodiment, a PN junction is provided for control purposes such that the potential is primarily dropped across the junction. The absorption band edge of the semiconductor is selected to correspond to the wavelength of the incident radiation to be controlled whereby in the normal mode of operation, the semiconductor appears to be transparent to the incident radiation. When charged carriers are introduced at the junction, the potential is dropped across the semi- conductor, causing an absorption edge shift towards longer wavelengths. In this mode of operation, the incident radiation is substantially absorbed, or attenuated, by the semiconductor.
273233
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