H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/184
H01L 45/00 (2006.01) G11C 17/00 (2006.01) H01L 23/525 (2006.01) H01L 27/06 (2006.01) H01L 27/24 (2006.01) H01L 29/04 (2006.01) H01L 29/167 (2006.01) H01L 29/68 (2006.01) H01L 29/861 (2006.01)
Patent
CA 1161970
ABSTRACT A diode has at least a first region and a second region with the regions abutting each other to form a junction therebetween and with the first region being made of an amorphous alloy including silicon and fluorine. Such a diode finds particular usefulness in closed cells in a ROM or in a EEPROM device having a memory circuit at each cross over point of a conductor of a first group of conductors in a memory matrix extending in a first direction over a conductor of a second group of conductors extending in a second direction traversing the first direction. The first group of conductors is insulated from the second group of conductors and each memory circuit is coupled to and between a pair of crossing over conductors at one of the cross over points and includes a memory region and the diode. Preferably, the amorphous alloy also contains hydrogen and such alloy is a-Sia:Fb:Hc, where a is between 80 and 98 atomic percent, b is between 0 and 10 atomic percent and c is between 0 and 10 atomic percent. me first and second alloy regions of can be oppositely P and N doped. Alternately, one of the regions can be a metal, metal alloy or a metallic like material to form a Schottky barrier with the other region or MIS junctions can be utilized.
430398
Flasck Richard A.
Holmberg Scott H.
Energy Conversion Devices Inc.
Macrae & Co.
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