Diode-pumped laser system using uranium-doped q-switch

Details Diode-pumped laser system using uranium-doped q-switch Diode-pumped laser system using uranium-doped q-switch

H - Electricity

01

S

H01S 3/091 (2006.01) H01S 3/113 (2006.01) H01S 3/0941 (2006.01) H01S 3/16 (2006.01) H01S 3/17 (2006.01)

Patent

CA 2195597

A laser system (20) includes a laser resonator cavity (22) having a resonant path (46) and an Er,Yb:glass lasing element (28) with an output of from about 1.5 to about 1.6 micrometers within the laser resonator cavity (22). A diode array (32) optically pumps the lasing element (28) to emit light. A Q-switch (44) lies along the resonant path (46) within the laser resonator cavity (22). The Q-switch (44) is formed of a host material having a concentration of uranium ions therein, so as to be a saturable absorber of the light emitted by the lasing element (28). The Q-switch (44) is preferably a uranium-doped fluoride such as U:CaF2, U:SrF2, or U:BaF2.

'invention est un laser (20) constitué d'une cavité résonante (22) comportant un trajet de résonance (46), et d'un élément actif Er-Yb:verre produisant une lumière dont la longueur d'onde varie entre 1,5 micromètre approximativement et 1,6 micromètre approximativement dans la cavité résonante (22). Un réseau de diodes (32) soumet l'élément actif (28) à un pompage optique pour lui faire produire la lumière. Un Q-switch (44) est monté sur le trajet de résonance (46) de la cavité résonante (22). Le Q-switch (44) est fait d'un matériau hôte contenant des ions d'uranium qui en font un absorbeur saturable pour la lumière produite par l'élément actif (28). De préférence, on choisit un fluorure dopé à l'uranium tel que U:CaF2, U:SrF2 ou U:BaF2 pour le Q-switch (44).

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