B - Operations – Transporting – 41 – M
Patent
B - Operations, Transporting
41
M
B41M 1/26 (2006.01) B41M 1/34 (2006.01) H05K 3/12 (2006.01)
Patent
CA 2706053
Provided are methods of patterning porous materials on the micro- and nanometer scale using a direct imprinting technique. The present methods of direct imprinting of porous substrates ("DIPS"), can utilize reusable stamps that may be directly applied to an underlying porous material to selectively, mechanically deform and/or crush particular regions of the porous material, creating a desired structure. The process can be performed in a matter of seconds, at room temperature or higher temperatures, and eliminates the requirement for intermediate masking materials and etching chemistries.
Liscidini Marco
Ryckman Judson D.
Sipe John E.
Weiss Sharon M.
Finlayson & Singlehurst
Vanderbilt University
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