Direct reading dosimeter

Details Direct reading dosimeter Direct reading dosimeter

G - Physics

01

T

G01T 1/02 (2006.01) G01T 7/00 (2006.01)

Patent

CA 2046398

ABSTRACT The invention relates to a radiation dosimeter having a pair of insulated gate field effect transistors integrated into the same silicon substrate, in which each of the transistors are operable in a bias mode and a test mode. A means for biasing each of the transistors, during the test mode is provided, so that one of the transistors is more sensitive to ionizing radiation than the other of the transistors. A means is provided for determining, during the test mode, the difference in the threshold voltages of the transistors, whereby the difference voltage is indicative of the radiation dose, and a means is provided for continuously switching the transistors between the bias mode and the test mode, whereby the period of operation of the transistors in the test mode time period is small in comparison to the period of operation of the transistors in the bias mode.

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