Direct synthesis process of indium phosphide

Details Direct synthesis process of indium phosphide Direct synthesis process of indium phosphide

C - Chemistry, Metallurgy

01

B

C01B 25/08 (2006.01) C01G 15/00 (2006.01)

Patent

CA 2326056

Direct synthesis process of indium phosphide starting from indium and phosphorous characterized in that the synthesis takes place in a completely closed reaction system using a reactor in which at least two containers are used, one in-side the other(s), the temperature being brought to a maxi-mum value ranging from 1070 to 1250°C, preferably from 1100 to 1200°C, and the pressure to a maximum ranging from 1850 to 2000 bars with a constant temperature increase with re-spect to the time, according to the following formula y = kx wherein y is the temperature in °C, x is the time in min-utes and k is a constant which has a value ranging from 5°C/minute to 20°C/minute.

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