Direct thermocompression bonding for thin electronic power...

Details Direct thermocompression bonding for thin electronic power... Direct thermocompression bonding for thin electronic power...

H - Electricity

01

L

H01L 23/48 (2006.01) B23K 31/02 (2006.01) H01L 21/447 (2006.01) H01L 21/603 (2006.01) H01L 23/482 (2006.01) H01L 29/46 (1990.01)

Patent

CA 2071496

Annealed copper foil (12) is coated with chromium film (16), followed by coating with an appropriate thickness of gold film (14) and is thermocompression bonded to an aluminum metallized substrate (18) on a silicon chip (30) to provide solderable, high current contacts to the chip. The foil is formed into appropriate electrical network-contact patterns (40) and is bonded to the silicon chip only where aluminum metallization exists on the chip. Leaf (wing) portions (46) of the foil extend beyond the bound- aries of the silicon chip for subsequent retroflexing over the foil to provide electrical contact at predesignated locations (49). Ex- ternal contacts to the foil are made by penetrating through a ceramic lid positioned directly above the foil area. Thus, direct ther- mocompression bonding of a principally copper foil to aluminum semiconductor pads can replace current gold detent/pump connections by securing a copper conductor to a silicon chip through an intermetallic AuAl2 link and an aluminum stratum.

Affiliated with

Also associated with

Rating

Direct thermocompression bonding for thin electronic power... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Direct thermocompression bonding for thin electronic power..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Direct thermocompression bonding for thin electronic power... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1686612