Direct writing of refractory metal lines for use in...

Details Direct writing of refractory metal lines for use in... Direct writing of refractory metal lines for use in...

H - Electricity

01

L

356/136

H01L 21/285 (2006.01) H01L 21/268 (2006.01) H01L 21/3205 (2006.01) H01L 21/768 (2006.01) H01L 21/82 (2006.01)

Patent

CA 1249071

DIRECT WRITING OF REFRACTORY METAL LINES FOR USE IN INTEGRATED CIRCUIT DEVICES ABSTRACT OF THE DISCLOSURE Laser beams are employed for direct writing of micron-sized refractory metal lines at a speed of several centimeters per second on silicon surfaces. Tungsten metal lines are selectfully deposited on silicon surfaces using laser induced chemical vapor deposition. Smooth tungsten lines with a length of a few centimeters and with a line width of between 2 and 15 microns are obtainable on silicon surfaces by employing argon lasers with focused spot sizes of approximately 20 microns. The process is particularly useful in the construction of custom integrated circuits, in the placement of discretionary conductors in integrated circuits, in mask correction, and in the correction of defects in large scale integrated circuitry and liquid crystal displays.

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