Directable aperture etched in silicon

Details Directable aperture etched in silicon Directable aperture etched in silicon

H - Electricity

01

L

356/177

H01L 21/308 (2006.01) B41J 2/16 (2006.01) H01L 21/306 (2006.01)

Patent

CA 1286423

-17- Abstract of the Disclosure A method for anisotropically etching an aperture into a monocrystaline substrate such that the angle of the aperture plane with respect to the nominal crystaline planes of the substrate may be preselected. Etchant pits through opposing planar surfaces are offset from one another by a preselected longitudinal offset trigonomstrically related to the desired aperture angle. Other selected parameters trigonometrically related to the aperture plane include: the intersecting angle of the intersecting crystaline planes with the nominal crystaline planes; substrate thickness; and depth of each of the etchant pits. 2301L

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