Dissolving baked novolak resin based photoresist with...

Details Dissolving baked novolak resin based photoresist with... Dissolving baked novolak resin based photoresist with...

G - Physics

03

C

149/10, 96/219

G03C 5/00 (2006.01) G03F 7/42 (2006.01)

Patent

CA 1067332

Abstract of the Disclosure Baked novolak resin based positive photoresists are either developed after exposure or stripped, following the use of the pattern resist layer as an etch mask, in aqueous solutions of a combination of permanganate and phosphoric acid.

236873

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