Distributed feedback semiconductor laser

H - Electricity – 01 – S

Patent

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H01S 3/06 (2006.01) H01S 5/12 (2006.01) H01S 5/223 (2006.01) H01S 5/10 (2006.01)

Patent

CA 1303195

ABSTRACT OF THE DISCLOSURE A distributed feedback semiconductor laser has a first cladding layer, an active layer, a guide layer on which a diffraction grating is formed and a second cladding layer, the effective thickness of the guide layer in the waveguide direction being made different in one region to change the phase of a light propagating through the waveguide.

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