H - Electricity – 01 – S
Patent
H - Electricity
01
S
H01S 5/12 (2006.01) H01S 5/323 (2006.01) H01S 5/343 (2006.01)
Patent
CA 2348419
A DFB semiconductor laser device including: a semiconductor substrate; and an active layer and a diffraction grating overlying the semiconductor substrate, the diffraction grating having a composition of GaInNAs(Sb) and absorbing light having a laser emission wavelength of the active layer. The DFB semiconductor laser device having a higher SMSR can be provided which stably operates in a wider range of injection current by proving the diffraction grating formed by the GaInNAs(Sb) having the composition for efficiently absorbing light which has the laser emission wavelength of the active layer.
Funabashi Masaki
Kasukawa Akihiko
Mukaihara Toshikazu
Shimizu Hitoshi
Smart & Biggar
The Furukawa Electric Co. Ltd.
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