Dmos-transistor with lateral dopant gradient in drift region...

Details Dmos-transistor with lateral dopant gradient in drift region... Dmos-transistor with lateral dopant gradient in drift region...

H - Electricity

01

L

H01L 29/06 (2006.01) H01L 21/336 (2006.01) H01L 29/78 (2006.01) H01L 29/786 (2006.01) H01L 29/08 (2006.01)

Patent

CA 2481834

A DMOS-transistor has a trench bordered by a drift region including two doped wall regions and a doped floor region extending along the walls and the floor of the trench. The laterally extending floor region has a dopant concentration gradient in the lateral direction. For example, the floor region includes at least two differently-doped floor portions successively in the lateral direction. This dopant gradient in the floor region is formed by carrying out at least one dopant implantation from above through the trench using at least one mask to expose a first area while covering a second area of the floor region.

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