H - Electricity – 01 – S
Patent
H - Electricity
01
S
H01S 5/02 (2006.01) G02B 6/12 (2006.01) H01L 31/0248 (2006.01) H01L 33/00 (2006.01) H01S 5/227 (2006.01) G02F 1/025 (2006.01) H01S 5/22 (2006.01) H01S 5/50 (2006.01)
Patent
CA 2342518
A method for decreasing the diffusion of dopant atoms in the active region, as well as the interdiffusion of different types of dopant atoms among adjacent doped regions, of optoelectronic devices is disclosed. The method of the present invention employs a plurality of InAlAs and/or InGaAlAs layers to avoid the direct contact between the dopant atoms and the active region, and between the dopant atoms in adjacent blocking structures of optoelectronic devices. A. semi-insulating buried ridge structure, as well as a ridge structure, in which the interdiffusion of different types of dopant atoms is suppressed are also disclosed.
Akulova Yuliya A.
Chu Sung-Nee G.
Geva Michael
Hybertsen Mark S.
Lentz Charles W.
Agere Systems Optoelectronics Guardian Corporation
Akulova Yuliya A.
Chu Sung-Nee G.
Geva Michael
Hybertsen Mark S.
LandOfFree
Dopant diffusion blocking for optoelectronic devices using... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Dopant diffusion blocking for optoelectronic devices using..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dopant diffusion blocking for optoelectronic devices using... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1774833