Doped lead tellurides for thermoelectric applications

Details Doped lead tellurides for thermoelectric applications Doped lead tellurides for thermoelectric applications

C - Chemistry, Metallurgy

01

B

C01B 19/00 (2006.01) C04B 35/515 (2006.01) H01L 35/16 (2006.01) H01L 35/22 (2006.01)

Patent

CA 2646191

A p- or n-conducting semiconductor material contains a compound of general formula Pb1-( x 1+ x 2+...+ xn )A1 x 1A2 x 2...An xnTe1+ z , wherein n independently represents the number of chemical elements different from Pb and Te, 1 ppm <=x1... xn <=0.05, -0.05<=z<= 0.05 and n>=2, A1.... An are different from each other and are selected from the group of elements including Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, Al, Ga, In, Tl, Si, Ge, Sn, As, Sb, Bi, S, Se, Br, I, Sc, Y, La, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Hg, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or n=1, and A1 is selected from Ti, Zr, Ag, Hf, Cu, Gr, Nb, Ta.

L'invention concerne un matériau semi-conducteur de conductivité p ou n contenant un composé représenté par la formule Pb1-( x 1+ x 2+...+ xn )A1 x 1A2 x 2...An xnTe1+ z dans laquelle, de façon respectivement indépendante, n est le nombre d'éléments chimiques différents de Pb et Te; 1 ppm <= x1... xn <= 0,05; -0,05 <= z <= 0,05; n >= 2; A1.... An sont différents l'un de l'autre et choisis parmi les éléments Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, Al, Ga, In, Tl, Si, Ge, Sn, As, Sb, Bi, S, Se, Br, I, Sc, Y, La, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Hg, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu; ou n = 1; et A1 est choisi parmi Ti, Zr, Ag, Hf, Cu, Gr, Nb, Ta.

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