H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 51/30 (2006.01) C07C 13/15 (2006.01) C07C 13/24 (2006.01) C07C 15/20 (2006.01) C30B 15/00 (2006.01) C30B 21/06 (2006.01) C30B 23/00 (2006.01) C30B 25/00 (2006.01) C30B 27/02 (2006.01) C30B 28/10 (2006.01) C30B 28/12 (2006.01) C30B 28/14 (2006.01) C30B 30/04 (2006.01) C30B 31/00 (2006.01) H01B 1/12 (2006.01) H01L 51/40 (2006.01) H05B 33/14 (2006.01) H05B 33/22 (2006.01) H01L 31/04 (2006.01)
Patent
CA 2476168
The present invention relates to a process for the preparation of doped organic semiconductor materials having an increased charge carrier density and effective charge carrier mobility, by doping with a dopant (1), a process in which after mixing the dopant (1) into the organic semiconductor material, hydrogen, carbon monoxide, nitrogen or hydroxyl radicals are split off and at least one electron is transferred to the semiconductor material or from the semiconductor material. The process is distinguished by the fact that an uncharged organic compound is used as dopant (1). The invention further relates to doped organic semiconductor materials obtainable by one of the processes. The semiconductor materials are distinguished by the fact that the doped layer contains cations (2) of at least one organic compound, the uncharged form of the organic compound (1) being unstable in air.
Li Fenghong
Pfeiffer Martin
Werner Ansgar
Gierczak Eugene J. A.
Novaled Ag
Novaled Gmbh
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