Doped precipitated silica

C - Chemistry – Metallurgy – 01 – B

Patent

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Details

C01B 33/187 (2006.01) B41M 5/52 (2006.01) C01B 33/12 (2006.01) C01B 33/193 (2006.01) C08K 3/36 (2006.01) D21H 19/40 (2006.01)

Patent

CA 2364996

The invention relates to foreign-atom-doped precipitated silicas having a BET surface area of more than 300 m2/g and a maximum surface concentration of the foreign atoms of 0.05 mmol/m2, to a process for preparing them and to the use of the resulting precipitated silicas in papermaking.

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