Doped tin tellurides for thermoelectric applications

Details Doped tin tellurides for thermoelectric applications Doped tin tellurides for thermoelectric applications

C - Chemistry, Metallurgy

01

B

C01B 19/00 (2006.01) H01L 23/38 (2006.01) H01L 35/16 (2006.01) H01L 35/34 (2006.01)

Patent

CA 2715040

The p- or n-conductive semiconductor material contains a compound of general formula (I) Sn a Pb1-a-(x1+...+xn) A1x1...A n xn (Te1-p-g-r Se p S q X r)1+z in which 0.05 < a < 1, n >= 1, where n is a number of chemical elements that differ from Sn and Pb, and independently 1 ppm <= x1... xn < 0.05, A1... A n differ from one another and are selected from the group of elements Li, Na, K, Rb, Cs, Mg, Ca, Y, Ti, Zr, Hf, Nb, Ta, Cr, Mn, Fe, Cu, Ag, Au, Ga, In, Tl, Ge, Sb, Bi X F, Cl, Br or 1,0 <= p <= 1,0 <= q <= 1,0 <= r <= 0.01, - 0.01 <= z <= 0.01, with the proviso that p + q + r <= 1 and a + x1 +... + xn <= 1. The invention also relates to a method for producing a semiconductor material of this type, to a thermoelectric generator or Peltier arrangement and to the use of the same. Image

L'invention concerne un matériau semi-conducteur de type p ou n qui contient un composé de formule générale Sna Pb1-a-(x1+... +xn) A1 x1...An xn (Te1-p-q-r SepSqXr)1+z (I). Dans la formule (I), 0,05 < a < 1, n = 1, n représentant le nombre d'éléments chimiques différents de Sn et Pb et, respectivement indépendamment, 1 ppm = x1... xn = 0,05, A1... An sont différents les uns des autres et sélectionnés dans le groupe des éléments Li, Na, K, Rb, Cs, Mg, Ca, Y, Ti, Zr, Hf, Nb, Ta, Cr, Mn, Fe, Cu, Ag, Au, Ga, In, Tl, Ge, Sb, Bi, X représente F, Cl, Br ou I, 0 = p = 1, 0 = q = 1, 0 = r = 0,01, - 0,01 = z = 0,01, à condition que p + q + r = 1 et a + x1 +... + xn = 1.

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