Doping method of barrier region in semiconductor device

Details Doping method of barrier region in semiconductor device Doping method of barrier region in semiconductor device

H - Electricity

01

L

356/149

H01L 21/335 (2006.01) H01L 21/225 (2006.01) H01L 21/336 (2006.01) H01L 21/762 (2006.01) H01L 29/06 (2006.01) H01L 29/10 (2006.01)

Patent

CA 2031254

ABSTRACT An exposed active surface is prepared on a major surface of a semiconductor substrate. A source gas containing an impurity component is applied to the exposed active surface whereat a film of the impurity component is adsorbed so as to form a barrier region along the major surface of the semiconductor substrate. A semiconductor device is formed on the major surface of the semiconductor substrate and is protected by the barrier region.

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