H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/149
H01L 21/335 (2006.01) H01L 21/225 (2006.01) H01L 21/336 (2006.01) H01L 21/762 (2006.01) H01L 29/06 (2006.01) H01L 29/10 (2006.01)
Patent
CA 2031254
ABSTRACT An exposed active surface is prepared on a major surface of a semiconductor substrate. A source gas containing an impurity component is applied to the exposed active surface whereat a film of the impurity component is adsorbed so as to form a barrier region along the major surface of the semiconductor substrate. A semiconductor device is formed on the major surface of the semiconductor substrate and is protected by the barrier region.
Akamine Tadao
Aoki Kenji
Saito Naoto
Akamine Tadao
Aoki Kenji
Borden Ladner Gervais Llp
Saito Naoto
Seiko Instruments Inc.
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