Doping method of impurity into semicondutor trench wall

Details Doping method of impurity into semicondutor trench wall Doping method of impurity into semicondutor trench wall

H - Electricity

01

L

356/151

H01L 21/38 (2006.01) H01L 21/225 (2006.01) H01L 21/329 (2006.01) H01L 21/334 (2006.01) H01L 21/762 (2006.01)

Patent

CA 2031252

ABSTRACT A trench is formed in a semiconductor substrate to provide therein an inner wall. Inert film is removed from the trench inner wall to expose an active surface. A source gas containing an impurity is applied to the active surface whereat the impurity is adsorbed to thereby form thereon an impurity film. The substrate is annealed to diffuse the impurity into the inner wall to thereby dope the impurity.

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