Doping procedures for semiconductor devices

Details Doping procedures for semiconductor devices Doping procedures for semiconductor devices

H - Electricity

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356/178

H01L 21/22 (2006.01) H01L 21/38 (2006.01) H01L 29/06 (2006.01)

Patent

CA 2018976

- 10 - DOPING PROCEDURES FOR SEMICONDUCTOR DEVICES Abstract A process is described for making semiconductor devices with highly controlled doping profiles. The process involves minimizing or eliminating segregation effects caused by surface electric fields created by Fermi-level pinning. These electric fields act on dopant ions and cause migration from the original deposition site of the dopant ions. Dopant ions are effectively shielded from the surface electric fields by illumination of the growth surfaces and by backgrounddoping. Also, certain crystallographic directions in certain semiconductors do not show Fermi-level pinning and lower growth temperatures retard or eliminate segregation effects. Devices are described which exhibit enhanced characteristics with highly accurate and other very narrow doping profiles.

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