Double channel planar buried heterostructure laser

Details Double channel planar buried heterostructure laser Double channel planar buried heterostructure laser

H - Electricity

01

S

345/32

H01S 5/227 (2006.01)

Patent

CA 1196077

ABSTRACT A semiconductor laser having a buried double heterostructure embodying the present invention includes a semiconductor substrate of a first conductivity type. A multi-layer double heterostructure includes successively at least a first cladding semiconductor layer of the first conductivity type, an active semiconductor layer, and a second cladding semiconductor layer of a second conductivity type. The active semiconductor layer has a narrower bandgap than those of the first and second cladding semiconductor layers. The multi-layer double heterostructure has a stripe geometry channelled along both sides there- of to an extent that two channels reach the first cladding layer. A current blocking layer is formed on the multi-layer double heterostructure except for the top surface of the stripe geometry, in order to block a current flow there- through. A pair of electrodes supply a voltage to forward bias the semicon- ductor laser. The current blocking layer functions to enhance greatly the temperature and output characteristics of the laser.

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