H - Electricity – 01 – S
Patent
H - Electricity
01
S
345/32
H01S 5/125 (2006.01) H01S 5/12 (2006.01) H01S 5/227 (2006.01)
Patent
CA 1196078
ABSTRACT A double heterostructure semiconductor laser device comprises a multi- layered structure including a semiconductor substrate of one conductivity type, a wide bandgap first layer of the same conductivity type disposed on a major surface of the substrate, a narrower bandgap active region disposed on the first layer, and a wide bandgap second layer of the opposite conductivity type disposed on the active region. The active region is capable of emitting stimulated radiation when the layers are forward biased. One of the first and second layers forms a periodic structure having a proscribed pitch of thickness in the propagating direction of the radiation. The multilayered structure has the shape of an elongated mesa, which extends parallel to the propagating direction of the radiation, channelled along both sides thereof to such an extent that two channels reach the first cladding layer. Wide bandgap third and fourth layers, opposite to each other in conductivity type, are formed on the multilayered structure except for the top surface of the mesa for blocking current flow therethrough. Electrodes are provided for applying said forward bias. The structure of the laser is resistant to high temperature operation because the laser is planar which permits the electrodes to be full surface ones. Also, the active layer is less susceptible to damage or deterioration than where a periodic structure is found after growth of an active layer. Finally as it has only one waveguide path it is free from output photocoupling difficulties.
417143
Mito Ikuo
Seki Masafumi
Nippon Electric Co. Ltd.
Smart & Biggar
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