Double crucible for single crystal growth

Details Double crucible for single crystal growth Double crucible for single crystal growth

C - Chemistry, Metallurgy

30

B

148/1.4

C30B 15/12 (2006.01)

Patent

CA 1272106

Abstract of the Disclosure A new improved double crucible is herein disclosed, which makes it possible to restrict influence exerted by an external force to its minimum level and may effectively be used in Czochralski method for growing single crystal having a uniform impurity distribution established therein and which is composed of an inner crucible and an outer crucible and characterized in that the cross sectional area S1 of the inner crucible at melt of starting material-single crystal interface is enlarged and determined so that the following requirement (a) is satisfied: S1 ( P M -P B) > 100g/cm ... (a) wherein P M is density of the melt of the starting material and P B is density of a liquid encapsulant, and that the cross sectional area S2 of the outer crucible satisfies the following requirement (b): S1/S2 > 1/100 ... (b)

509522

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