Double heterostructure laser and a method of making same

Details Double heterostructure laser and a method of making same Double heterostructure laser and a method of making same

H - Electricity

01

S

345/32

H01S 5/223 (2006.01)

Patent

CA 1226659

DOUBLE HETEROSTRUCTURE LASER AND A METHOD OF MAKING SAME ABSTRACT OF THE DISCLOSURE A semiconductor laser comprising a substrate having a plurality of closely spaced channels in the surface thereof with mesas separating the channels to form a channeled region in the surface of the substrate. A first cladding layer overlies the surface of the substrate and the channels and has a surface layer over the channeled region which is not coplanar with the surface of this layer over the surrounding substrate. A cavity region comprising a guide layer and an active layer overlies the first cladding layer and a second cladding layer overlies the active layer. The active layer and guide layer taper in thickness in the lateral direction. The invention also includes a method of fabricating this laser which includes the steps of forming a plurality of corrugations in the surface of the substrate, forming a solution having a super-saturated growth condition for planar and concave surfaces and an under-saturated growth condition for convex surfaces, contacting the corrugated surface to the solution thereby partially melting the convex portions of the corrugations and forming mesas there between. Growth over the corrugations is delayed thereby providing a planar surface of the first layer over a central portion of the channeled region which is non-planar with respect to the surface of the layer over the remainder of the substrate. The trough thus formed by the delayed growth over the channeled region provides a curved surface upon which the remaining layers of the laser are then sequentially deposited.

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