Double heterostructure semiconductor laser with periodic...

Details Double heterostructure semiconductor laser with periodic... Double heterostructure semiconductor laser with periodic...

H - Electricity

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H01S 5/227 (2006.01) H01S 5/12 (2006.01) H01S 5/026 (2006.01) H01S 5/10 (2006.01) H01S 5/223 (2006.01)

Patent

CA 1197308

ABSTRACT OF THE DISCLOSURE A double heterostructure semiconductor laser device comprises; a composite structure including a semiconductor substrate of one conductivity type and a first semiconductor layer disposed on the semiconductor substrate. The composite structure has a first level and a second level higher than the first level to an extent of the thickness of the first semiconductor layers or more. The transition between the first and second levels is in the propagation of the laser radiation and has a slant crystal face. The first semiconductor layer on the second level has a periodic structure of a pre- scribed pitch of thickness formed along the side thereof in the propagation of the laser radiation. A second semiconductor layer of one conductivity type is formed on the first and second levels, having a greater bandgap than that of the first semiconductor layer. The second semiconductor layer is separated into two portions in the extension of the slant crystal face. A semiconductor active layer is formed on the second semiconductor layer, having a smaller bandgap than that of the second semiconductor layer. The ends of the semi- conductor active layers and first semiconductor layer abut in the extension of the slant crystal face. A third semiconductor layer of the opposite con- ductivity type is formed on the semiconductor active layer, having a greater bandgap than that of the semiconductor active layer, whereby the application of a forward bias to the semiconductor active layer produces stimulated emission of radiation.

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