Double implant, double regrowth, avalanche photodiode

Details Double implant, double regrowth, avalanche photodiode Double implant, double regrowth, avalanche photodiode

H - Electricity

01

L

345/26

H01L 31/107 (2006.01)

Patent

CA 2030636

GECAN 3057 DOUBLE IMPLANT, DOUBLE REGROWTH, AVALANCHE PHOTODIODE Abstract of the Disclosure There is disclosed an avalanche photodiode having a first silicon implant located on an upper surface of a buffer layer below the absorptive layer of the diode for limiting the depletion layer through the diode. The diode further includes a second silicon implant in the active region of the device for enhancing the multiplication in the active layer and reducing multiplication of the surface leakage current.

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