Double layer dielectric passivation

Details Double layer dielectric passivation Double layer dielectric passivation

H - Electricity

01

L

356/171

H01L 29/06 (2006.01) H01L 23/485 (2006.01) H01L 29/78 (2006.01)

Patent

CA 1253261

ABSTRACT A semiconductor device comprising a substrate layer (11) of a first conductivity type, and epitaxial layer (13) of a second conductivity type overlying said substrate layer (11), and an insulating layer (16) covering at least a portion of said epitaxial layer (13). According to the invention, a passivating layer (17) having a high dielectric constant, at least ten times higher than that of silicon-dioxide, is present on said insulating layer (16).

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