Double wafer moated signal processor

Details Double wafer moated signal processor Double wafer moated signal processor

H - Electricity

01

L

356/138

H01L 25/04 (2006.01) H01L 21/762 (2006.01) H01L 21/768 (2006.01) H01L 21/98 (2006.01) H01L 25/065 (2006.01)

Patent

CA 1286796

Abstract of the Disclosure The method of forming a multiwafer integrated circuit for abutting electrical connection to external electronics is disclosed. The method comprises forming a plurality of grooves in the first surface of each of first and second wafers. The grooves are filled with a body of insulating material and joined along the groove surfaces thereof. In one embodiment active circuitry is formed in one of the abutting wafer surfaces. In another embodiment active circuitry is formed in a non-abutting surface of one of the wafers. Conductive leads are applied to the surface of one of the wafers to be in electrical communication with the doped regions. At least one of the conductive leads extends across at least a portion of the grooves. The wafers are trimmed in length so that the lengthwise edges of the wafers are defined by the grooves and the butt end of at least one of the conductive leads is exposed. A layer of conductive material is deposited along the lengthwise edge of the wafers in electrical communication with the exposed conductive lead to facilitate communication between the doped regions and external electronics. 101

581173

Affiliated with

Also associated with

Rating

Double wafer moated signal processor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Double wafer moated signal processor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Double wafer moated signal processor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1265931