Driver circuit for bridge circuit employing a bootstrap...

H - Electricity – 03 – K

Patent

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Details

H03K 17/06 (2006.01) H03K 17/687 (2006.01) H02M 7/538 (2006.01)

Patent

CA 2171765

A half-bridge driver circuit including a lower drive module and a floating upper drive module for driving respective external upper and lower power transistors of a high voltage half bridge is contained in an integrated circuit chip which includes an on-chip bootstrap diode emulator for charging an external bootstrap capacitor that powers the upper drive module. The upper drive is accommodated in an insulated well and the diode emulator includes as its main current carrying element, an LDMOS transistor formed along the periphery of the well. The LDMOS transistor is driven into a conducting state at the same time the lower power transistor is driven into a conducting state. A clamp and current source solidly bias the backgate of the LDMOS while limiting the current drawn by a parasitic transistor attached to the backgate during startup of the LDMOS.

Un circuit d'attaque en demi-pont comprenant un module d'attaque inférieur et un module d'attaque supérieur flottant qui attaquent des transistors de puissance supérieur et inférieur externes respectifs d'un demi-pont à haute tension, est disposé sur une puce de circuit intégré qui comporte un émulateur de diode d'amorçage intégré destiné à charger un condensateur d'amorçage externe qui alimente le module d'attaque supérieur. Ce dernier trouve place dans un puits isolé et l'émulateur de diode présente, en tant qu'élément porteur de courant principal, un transistor LDMOS formé le long de la périphérie du puits. Ce transistor LDMOS est amené à l'état conducteur en même temps que le transistor de puissance inférieur. Un dispositif de verrouillage et une source de courant polarisent fermement la porte arrière du LDMOS tout en limitant le courant prélevé par un transistor parasitaire fixé à cette porte arrière pendant la mise sous tension dudit LDMOS.

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