Dry etching method

Details Dry etching method Dry etching method

H - Electricity

01

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H01L 21/77 (2006.01) C04B 41/53 (2006.01) H01L 21/02 (2006.01) H01L 21/311 (2006.01) H01L 21/3213 (2006.01)

Patent

CA 2199878

A dry etching method is suitable for fabricating ferroelectric RAMs, a non-volatile memory, having a central core structure of PZT (a strong dielectric material) sandwiched between two electrodes (Ir/IrO2). The method is applicable to dry etching of a monolayer or laminated structure of a combination of ferroelectric films such as PZT-based, Sr-based, or Bi-based film as well as electrode structures of Ir or Pt/Ti group materials. The method utilizes a gaseous mixture of chloride-based gases such as BCl3 and Cl2, or SiCl4, or fluoride-based gases such as CF4, or C2F6 or a gaseous mixture of chloride- and fluoride-based gases, or bromide-based gases such as HBr. The method produces cavities having a high aspect ratio, free from products of reaction which are usually deposited on the cavity surfaces produced by the conventional dry etchants.

Méthode de gravure à sec pour la fabrication d'une RAM ferroélectrique (mémoire permanente) ayant une structure centrale de PZT (matériau fortement diélectrique) intercalée entre deux électrodes (Ir/IrO2). La méthode est applicable à la gravure à sec d'une structure monocouche ou laminée d'une combinaison de films ferroélectriques, p. ex. à base de PZT, de Sr ou de Bi ainsi que des structures d'électrode à matériaux du groupe Pt/Ti ou Ir. La méthode utilise un mélange de gaz à base de chlorure tels que BCl3 et Cl2, ou SiCl4, ou de gaz à base de fluorure tels que CF4 ou C2F6, ou un mélange de gaz à base de chlorure et de fluorure, ou de gaz à base de bromure tels que HBr. La méthode produit des cavités ayant un rapport de forme élevé, libres des produits de réaction qui se déposent habituellement sur les surfaces de cavités produites par des moyens de gravure à sec classiques.

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