C - Chemistry – Metallurgy – 23 – F
Patent
C - Chemistry, Metallurgy
23
F
204/96.05
C23F 4/00 (2006.01) H05K 3/06 (2006.01) H05K 3/38 (2006.01)
Patent
CA 1161787
Dry Etching of Copper Patterns Abstract The use of a molybdenum diffusion barrier between a copper layer and a magnesium oxide dry etch mask to obtain and insure adhesion between the two. FI9-80-023
389000
Schaible Paul M.
Schwartz Geraldine C.
International Business Machines Corporation
Rosen Arnold
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