Dry etching of copper patterns

C - Chemistry – Metallurgy – 23 – F

Patent

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204/96.05

C23F 4/00 (2006.01) H05K 3/06 (2006.01) H05K 3/38 (2006.01)

Patent

CA 1161787

Dry Etching of Copper Patterns Abstract The use of a molybdenum diffusion barrier between a copper layer and a magnesium oxide dry etch mask to obtain and insure adhesion between the two. FI9-80-023

389000

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