Dry etching of metal film

C - Chemistry – Metallurgy – 23 – F

Patent

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Details

204/96.05

C23F 1/00 (2006.01) C23F 4/00 (2006.01) H01L 21/3213 (2006.01)

Patent

CA 1136525

DRY ETCHING OF METAL FILM ABSTRACT OF THE DISCLOSURE A process for dry etching an aluminum film and an aluminum based film in the production of a semiconductor device, wherein a mixed gas of carbon chloride and boron chloride is used as an etchant gas.

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