Dry etching of silicon carbide

Details Dry etching of silicon carbide Dry etching of silicon carbide

C - Chemistry, Metallurgy

23

F

204/96.05

C23F 1/02 (2006.01) C03C 15/00 (2006.01) H01L 21/04 (2006.01) H01L 21/306 (2006.01)

Patent

CA 1329167

DRY ETCHING OF SILICON CARBIDE Abstract of the Invention The invention comprises a method of etching silicon carbide targets. In one embodiment, a reactive ion plasma is formed from a gas which is easily dissociated into its elemental species in the plasma, for which all of the dissociated elemental species are volatile in the plasma, and for which at least one of the elemental species is reactive with silicon carbide. The silicon carbide target to be etched is positioned on one of the electrodes which is formed from a material with a low sputter yield and which material reacts with a dissociated species to thereby prevent contamination of the target with either sputtered materials from the electrode or polymerized species from the plasma.

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