H - Electricity – 01 – J
Patent
H - Electricity
01
J
313/35.29
H01J 31/58 (2006.01) H01J 29/39 (2006.01)
Patent
CA 1088991
IMPROVED DSDT TARGET AND METHOD FOR FABRICATING THE SAME Abstract of the Disclosure A process for the fabrication of a deformographic storage display tube (DSDT) target in which a wafer of silicon or other etchable material is used (1) as a temporary support during the generation of the active region of the target and (2) as a supporting structure for the completed target. The DSDT target structure comprises a reflection layer on a dielectric layer supported in turn on a silicon or other etchable material wafer, the wafer being etched off at its back side to expose the dielectric layer while providing an outer frame support structure made of the wafer around the edge, with the dielectric layer being etched to form pillars of the dielectric on the backside of the reflection layer, whereby the dielectric pillars enable a deformation action to occur in the region between the pillars. An inner frame support structure comprised of a similarly etched wafer, a dielectric layer and a secondary electron emission layer is fitted against the bottoms of the pillars and bonded to the outer frame support structure, thereby forming the completed target.
290763
Park Kyu C.
Reisman Arnold
Gowling Lafleur Henderson Llp
International Business Machines Corporation
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