H - Electricity – 03 – B
Patent
H - Electricity
03
B
331/64
H03B 5/12 (2006.01) H03B 1/00 (2006.01)
Patent
CA 1295696
Abstract A dual gate field effect transistor (FET) is configured as a self-buffering local oscillator of a tuner by arranging the FET in a cascode configuration in which the first gate electrode is coupled to the source electrode through an oscillation conditioning network and also to a frequency determining network, the second gate electrode is coupled to signal ground through a negligible impedance and the drain electrode is utilized as the output of the oscillator.
552852
Craig Wilson And Company
Rca Licensing Corporation
LandOfFree
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