Dual injector, floating gate mos electrically alterable,...

Details Dual injector, floating gate mos electrically alterable,... Dual injector, floating gate mos electrically alterable,...

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G11C 11/40 (2006.01) H01L 21/8247 (2006.01) H01L 27/07 (2006.01) H01L 27/115 (2006.01) H01L 29/76 (2006.01) H01L 29/788 (2006.01)

Patent

CA 1095171

TI-6219 DUAL INJECTOR, FLOATING GATE MOS ELECTRICALLY ALTERABLE, NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE ABSTRACT OF THE DISCLOSURE A dual injector, floating-gate MOS non-volatile semiconductor memory device (DIFMOS) has been fabricated, using process specifications and design rules of the same general character previously developed for single-level metal gate CMOS devices. An electron injector junction (p+/n) is avalanched to "write" a charge on the floating gate, and a hole injector junction (n+/p-) is avalanched to "erase" the charge. An MOS sensing transistor, whose gate is an extension of the floating gate, "reads" the presense or absence of charge on the floating gate. In a preferred embodiment, the hole injection means includes an MOS "bootstrap" capacitor for coupling a voltage bias to the floating gate.

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